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DSA0034346.pdf
Manufacturer
SANYO Electric
Partial File Text
FTD2012 N- Channel Silicon MOS FET Load S/W USE TENTATIVE Features · Low ON-state resistance. · 4V drive. · Mount height of 1.1mm. · Complex Type enabling high density mount unit Absolute
Datasheet Type
Original
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User Tagged Keywords
BR D2012
D2012
FET MARKING QG
FTD2012
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