DSA2IH00178018.pdf by Not Available

Partial File Text Si-N Channel MOS FET Triode BF 543 P relim inary Data · For RF stages up to 300 MHz preferably in FM applications · loss = 4 mA, g(s = 12 mS ESD:Electrostatic discharge sensitive device, obse
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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