DSAIH000111342.pdf by Eon Silicon Solution

Partial File Text EN27LN4G08 EN27LN4G08 4 Gigabit (512M x 8), 3.3 V NAND Flash Memory Features â¢ Voltage Supply: 2.7V ~ 3.6V â¢ Reliable CMOS Floating-Gate Technology - ECC Requirement: 4 bit/512 Byte -
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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