Scans-00150432.pdf

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Partial File Text TO SH IBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2SB1481 SWITCHING APPLICATIONS 2SB1481 Unit in mm · · · High DC Current Gain : hFE = 2000 (Min.) (VCE= _ 2 V , In = -1 .5 A )
Datasheet Type Scan
ECAD Model

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