DSA2IH00180044.pdf by Not Available

Partial File Text SIEMENS Silicon N Channel MOS FET Triode Preliminary Data · For R F stages up to 300 MHz preferably in FM applications · lo ss = 4 mA, gis = 12 mS BF 543 ESD : Electrostatic discharge sensitiv
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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