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DSA00274975.pdf
Manufacturer
Hitachi Semiconductor
Partial File Text
2SK3151 Silicon N Channel MOS FET High Speed Power Switching 2nd. Edition February 1999 Features · · · Low on-resistance RDS (on) = 11.5 m typ. High speed switching 4 V gate drive device can be
Datasheet Type
Original
ECAD Model
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HX 830