DSA00275134.pdf by Hitachi
- 4AK16 Silicon N-Channel Power MOS FET Array November 1996 Application High speed power switching Features ยท Low on-resistance RDS(on) 0.18 , VGS = 10 V, ID = 5 A RDS(on) 0.25 , VGS = 4 V, I
- Original
- Unknown
- Unknown
- Unknown
-
Powered by
Findchips
