DSA00275139.pdf
- Hitachi
- 4AK22 Silicon N-Channel Power MOS FET Array November 1996 Application High speed power switching Features ยท Low on-resistance RDS(on) 0.4 , VGS = 10 V, ID = 1.5 A RDS(on) 0.55 , VGS = 4 V,
- Original
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