DSA00275375.pdf by Hitachi Semiconductor

Partial File Text 2SK3380 Silicon N Channel MOS FET High Speed Switching ADE-208-806 (Z) 1st.Edition. June 1999 Features · Low on-resistance RDS =1.26 typ. (VGS = 10 V , ID = 150 mA) RDS = 2.8 typ. (VGS = 4 V ,
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