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    DSA00275377.pdf by Hitachi Semiconductor

    • 2SK3378 Silicon N Channel MOS FET High Speed Switching ADE-208-805 (Z) 1st.Edition. June 1999 Features ยท Low on-resistance RDS =2.7 typ. (VGS = 10 V , ID = 50 mA) RDS = 4.7 typ. (VGS = 4 V , I
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