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    DSA00275378.pdf by Hitachi Semiconductor

    • 2SK3288 Silicon N Channel MOS FET High Speed Switching ADE-208-803 (Z) 1st.Edition. June 1999 Features ยท Low on-resistance RDS = 2.7 typ. (VGS = 10 V , ID = 50 mA) RDS = 4.7 typ. (VGS = 4 V ,
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