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Scans-00151777.pdf
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TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA MICROWAVE POWER GaAs FET S9G08A FEATURES LOW DISTORTION Padj = -74 dBc@ Po = 38 dBm HIGH GAIN GidB = 13 dB PARTIALLY MATCHED TYPE HERMETICAL
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2-16G6A
S9G08A
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