DSA00275711.pdf by Hitachi

Partial File Text 2SJ483 Silicon P Channel MOS FET High Speed Power Switching ADE-208-519 1st. Edition Features · Low on-resistance R DS(on) = 0.08 typ (at VGS = 10 V, I D = 2.5 A) · 4V gate drive devices. · Lar
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2SJ483

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