DSA00275713.pdf by Hitachi

Partial File Text 2SJ486 Silicon P Channel MOS FET Low FrequencyPower Switching ADE-208-512 A 2nd. Edition Features · Low on-resistance R DS(on) = 0.5 typ. (at V GS = 4V, I D = 100 mA) · 2.5V gate drive devices
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ADE-208-512 Hitachi 2SJ