DSA00275717.pdf by Hitachi

Partial File Text 2SJ506(L), 2SJ506(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-548 Target Specification 1st. Edition Features · Low on-resistance R DS(on) = 0.065 typ. (at V GS = 10V, I D =
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2sj506 Hitachi 2SJ