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    DSA00275718.pdf by Hitachi Semiconductor

    • 2SJ517 Silicon P Channel MOS FET High Speed Power Switching ADE-208-575B (Z) 3rd. Edition Jun 1998 Features · Low on-resistance R DS(on) = 0.18 typ. (at V GS =­4V, ID =­1A) · Low drive current ·
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