DSAUD0043212.pdf by Cree

Partial File Text CGH40035F 35 W, RF Power GaN HEMT Cree's CGH40035F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40035F, operating from a 28 volt rail, offers a general p
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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470PF CGH4003 CGH40035 CGH40035-TB CGH40035F CGH40035F-TB Gan transistor RO4350B