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DSAUD0043212.pdf
Manufacturer
Cree
Partial File Text
CGH40035F 35 W, RF Power GaN HEMT Cree's CGH40035F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40035F, operating from a 28 volt rail, offers a general p
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ECAD Model
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User Tagged Keywords
470PF
CGH4003
CGH40035
CGH40035-TB
CGH40035F
CGH40035F-TB
Gan transistor
RO4350B