DSA00277927.pdf by Hitachi

Partial File Text 2SJ484 Silicon P-Channel MOS FET High Speed Power Switching ADE-208-501 A 2nd. Edition Features · Low on-resistance RDS(on) = 0.18 typ. (at VGS = 10V, ID = 1A) · Low drive current · High speed
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
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