DSA00277931.pdf by Hitachi

Partial File Text 2SJ486 Silicon P Channel MOS FET Low FrequencyPower Switching ADE-208-512 A 2nd. Edition Features · Low on-resistance RDS(on) = 0.5 typ. (at VGS = 4V, ID = 100 mA) · 2.5V gate drive devices. ·
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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