DSA00278730.pdf
by Hitachi
- 4AK21 Silicon N-Channel Power MOS FET Array Application High speed power switching Features · Low on-resistance RDS(on) 0.09 , VGS = 10 V, ID = 4 A RDS(on) 0.12 , VGS = 4 V, ID = 4 A · · ·
- Original
- No
- Unknown
- Transferred
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