DSA00279983.pdf by Hitachi Semiconductor

Partial File Text HAT3010R Silicon N/P Channel Power MOS FET High Speed Power Switching ADE-208-1402F (Z) 7th. Edition Feb. 2002 Features · Low on-resistance · Capable of 4.5 V gate drive · High density mounting
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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