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    • Tem ic __________________________ SÌ4936DY sìiicon ix Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS(V) 30 ·DSion) (ß ) 0.037 @ VGS = 10 V 0.055 @ Vqs = 4.5 V I d (A) ±5.8 ±4.7 SO-
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