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    DSAZIHA100018068.pdf by American Microsemiconductor

    • 2N652A+JAN Transistors Ge PNP Lo-Pwr BJT Military/High-RelY V(BR)CEO (V)30ã V(BR)CBO (V)45 I(C) Max. (A)500m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)100þ I(CBO) Max. (A
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