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Scans-00156851.pdf
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CEM8410 LLI _March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES ⢠30V, 10A, Rds(on)=1 5mD @ Vgs=1 0V. rds(on)=20mi2 @Vgs=4.5V. ⢠Super high dense cell design for extre
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ECAD Model
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CEM8410
