DSAZIHA100083587.pdf by Cree

Partial File Text CGHV1F006S 6 W, DC - 18 GHz, 40V, GaN HEMT Creeâs CGHV1F006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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