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DSAZIHA100083610.pdf
by Cree
Partial File Text
PRELIMINARY CGHV22300MP 300 W, 1800 -2200 MHz, GaN HEMT for LTE Creeâs CGHV22300MP is a gallium nitride (GaN) high electron mobility transistor (HEMT) is designed specifically for hi
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Original
RoHS
Unknown
Pb Free
Unknown
Lifecycle
Unknown
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