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DSAZIHA100083626.pdf
Manufacturer
Cree
Partial File Text
CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Creeâs CGH35030F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gai
Datasheet Type
Original
ECAD Model
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