DSAZIHA100083626.pdf by Cree

Partial File Text CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Creeâs CGH35030F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gai
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RoHS Unknown
Pb Free Unknown
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