DSA00102297.pdf by Renesas Technology

Partial File Text 2SJ479(L), 2SJ479(S) Silicon P Channel MOS FET REJ03G0866-0300 Rev.3.00 Jun 05, 2006 Description High speed power switching Features · Low on-resistance RDS (on) = 25 m typ. · 4 V gate d
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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