DSAZIHA100084783.pdf by Central Semiconductor

Partial File Text PROCESS CP331 Power Transistor NPN - High Voltage Darlington Transistor Chip PROCESS DETAILS Die Size 39.4 x 39.4 MILS Die Thickness 9.1 MILS Base Bonding Pad Area 7.9 x 7.
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
Price & Stock Find it at Findchips.com

DSAZIHA100084783.pdf preview Download Datasheet