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DSAIH00018789.pdf
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Preliminary information I l A 5V/3V l M x l ó CMOS DRAM (EDO) AS4C1M16E5 AS4LC1M16E5 Features · Organization: 1,048,576 words x 16 bits · High speed - 4 5 /5 0 /6 0 ns RA S access tim e -
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ECAD Model
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