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2N7002E
datasheet
by Vishay Siliconix
Description
MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:240mA; On-Resistance, Rds(on):3ohm; Package/Case:TO-236; Drain-Source Breakdown Voltage:60V; Gate-Source Voltage:2.5V; Leaded Process Compatible:No RoHS Compliant: No
Datasheet Type
Original
RoHS
Unknown
Pb Free
Unknown
Lifecycle
Unknown
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2N7002E
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