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    2N6247 datasheet

    • General Electric
    • Epitaxial-base, silicon P-N-P high-power transistor. -90V, 125W. - Pol=PNP / Pkg=TO3 / Vceo=90 / Ic=10 / Hfe=20-100 / fT(Hz)=10M / Pwr(W)=125
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