DSA00143823.pdf by Ericsson

Partial File Text e PTB 20080 25 Watts, 1.61.7 GHz RF Power Transistor Description ThPTB 20080 is a class A/AB, NPN, silicon bipolar junction, internallymatched RF power transistor intended for 26 Vdc operation f
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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