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    DSAZIHA100020671.pdf by American Microsemiconductor

    • MPS835 Transistors Si NPN LP HF BJT Military/High-RelN V(BR)CEO (V)20â V(BR)CBO (V)25 I(C) Max. (A)200m Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)500n
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