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    DSAZIHA100021044.pdf

    • American Microsemiconductor
    • TE3859 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V(BR)CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC) I(CBO) Max. (A)500n @V(C
    • Original

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