DSA0072729.pdf by Toshiba

Partial File Text TOSHIBA S8837A MICROWAVE POWER GaAs FET Power GaAs FETs (Packaged) Features · High power - P1dB = 32 dBm at f = 8 GHz · High gain - G1dB = 7 dB at f = 8 GHz · Suitable for C-Band amplifier
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Obsolete
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S8837A TOSHIBA MICROWAVE AMPLIFIER

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