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    DSAZIHA100021358.pdf by American Microsemiconductor

    • T62R06130300 Thyristors Four-Layer (Shockley) Diode V(BO) Min. (V)750 V(BO) Max. (V)0.8k I(S) Max. (A)15m I(TRM) Max. (A)200² @ t(w) (s) (Test Condition) I(TSM) Max. (A)3.0kÂ¥ V(R) Max. (V)60
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