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    DSAZIHA100022236.pdf by American Microsemiconductor

    • IRFBE30 Transistors N-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)800 V(BR)GSS (V) I(D) Max. (A)4.1 I(DM) Max. (A) Pulsed I(D)2.6 @Temp (øC)100# IDM Max (@25øC Amb)16 @Pulse W
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    DSAZIHA100022236.pdf preview

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