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    DSAZIHA100022673.pdf by American Microsemiconductor

    • MTB3N120E Transistors N-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)1200 V(BR)GSS (V)20 I(D) Max. (A)3.0# I(DM) Max. (A) Pulsed I(D)2.2 @Temp (øC)100# IDM Max (@25øC Amb)9.0 @
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