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DSAIHSC000103854.pdf
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TOSHIBA M ICROW AVE POWER QaAs F MICROWAVE SEMICONDUCTOR TIM0910-20 TECHNICAL DATA FEATURES: â H IG H POWER P id B = 43. 5 dBm at 9. 5GHz to 10. 5GHz H IG H G A IN G id B = 6 .0
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