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    DSAIHSC000104216.pdf

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    • TOSHIBA MICROWAVE POWER GaAs FET TIM1213-4 Internally Matched Power GaAs FETs (X, Ku-Band) Features • High power - PidB = 36.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G1dB = 7.5 dB a
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