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Partial File Text TOSHIBA MICROWAVE POWER GaAs FET TNM1800-7 High Power GaAs FETs (L, S-Band) Features â¢ High power - P 1dB = 3 9 .5 dBm at 1.8 G H z â¢ High gain - G 1dB = 10 .0 dB at 1.8 G H z â¢ Her
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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