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TOSHIBA
MICROWAVE POWER GaAs FET
TNM1800-7
High Power GaAs FETs (L, S-Band)
Features
⢠High power
- P 1dB = 3 9 .5 dBm at 1.8 G H z
⢠High gain
- G 1dB = 10 .0 dB at 1.8 G H z
⢠Her