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TOSHIBA
MICROWAVE POWER GaAs FET
S8850A
Power GaAs FETs (Chip Form)
Features
⢠High power
- pidB = 21.5 dBm a tf = 15 GHz
⢠High gain
- G-^g = 9.0 dB at f = 15 GHz
⢠Suitable for Ku