DSAIHSC000104229.pdf by Not Available

Partial File Text TOSHIBA MICROWAVE POWER GaAs FET S8850A Power GaAs FETs (Chip Form) Features â¢ High power - pidB = 21.5 dBm a tf = 15 GHz â¢ High gain - G-^g = 9.0 dB at f = 15 GHz â¢ Suitable for Ku
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

DSAIHSC000104229.pdf preview Download Datasheet