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TOSHIBA
MICROWAVE POWER GaAs FET
S8836B
Power GaAs FETs (Chip Form)
Features
⢠High power
- PidB = 29.5 dBm at f = 8 GHz
⢠High gain
- G 1dB = 7.5 dB at f = 8 GHz
⢠Suitable for C