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TOSHIBA
MICROWAVE POWER GaAs FET
S8836A
Power GaAs FETs (Chip Form)
Features
â¢H ig h power
- Pld B = 29.5 dBm at f = 8 GHz
⢠High gain
- G-|dB = 7.5 dB at f = 8 GHz
⢠Suitable for C