DSA00320098.pdf
by Infineon Technologies
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BF543
Silicon N-Channel MOSFET Triode
For high-frequency stages up to 300 MHz
3
preferably in FM applications
IDSS = 4mA, g fs = 12mS
2 1
VPS05161
ESD: Electrostatic discharge sensiti
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Original
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Unknown
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Unknown
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Unknown
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