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Partial File Text TOSHIBA MICROWAVE POWER GaAs FET TIM5964-4 Internally Matched Power GaAs FETs (C-Band) Features â¢ High power - PidB = 36.0 dBm at 5.9 GHz to 6.4 GHz â¢ High gain - G-i ^ b = 8.5 dB at 5
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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